INFINEON TECHNOLOGIES AG JANSH2N7431 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG JANSH2N7431

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 35A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
3A001.a.1.a
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-CSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
DLA Qualification
Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
3
Drain Current-Max (ID) (A)
35
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
500
Pulsed Drain Current-Max (IDM) (A)
140
Drain-source On Resistance-Max (ohm)
0.021
Screening Level / Reference Standard
MIL-19500/663