International Rectifier Corporation JANSH2N7261 | 搜芯易Sourcengine

International Rectifier Corporation JANSH2N7261

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
3A001.a.1.a
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.8
Drain Current-Max (ID) (A)
8
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
105
DS Breakdown Voltage-Min (V)
100
Turn-off Time-Max (toff) (ns)
98
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
25
Avalanche Energy Rating (Eas) (mJ)
130
Pulsed Drain Current-Max (IDM) (A)
32
Drain-source On Resistance-Max (ohm)
0.185
Screening Level / Reference Standard
MIL-19500/601