INFINEON TECHNOLOGIES AG JANSG2N7583U2A | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG JANSG2N7583U2A

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 56A I(D), 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
3A001.a.1.a
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-CSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
250
Drain Current-Max (ID) (A)
56
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
200
DS Breakdown Voltage-Min (V)
200
Feedback Cap-Max (Crss) (pF)
13
Turn-off Time-Max (toff) (ns)
150
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
263
Pulsed Drain Current-Max (IDM) (A)
224
Drain-source On Resistance-Max (ohm)
0.028
Screening Level / Reference Standard
MIL-19500; MIL-STD-750; RH - 500K Rad(Si)