INFINEON TECHNOLOGIES AG JANSG2N7469U2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG JANSG2N7469U2

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
3A001.a.1.a
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
75
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Avalanche Energy Rating (Eas) (mJ)
363
Pulsed Drain Current-Max (IDM) (A)
300
Drain-source On Resistance-Max (ohm)
0.012
Screening Level / Reference Standard
MIL-19500/673