International Rectifier Corporation JANSG2N7380 | 搜芯易Sourcengine

International Rectifier Corporation JANSG2N7380

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
3A001.a.1.a
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-257AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
14.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Avalanche Energy Rating (Eas) (mJ)
150
Pulsed Drain Current-Max (IDM) (A)
58
Drain-source On Resistance-Max (ohm)
0.2
Screening Level / Reference Standard
MIL-19500/614