Microsemi Corporation JANSF2N3019S | 搜芯易Sourcengine

Microsemi Corporation JANSF2N3019S

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
VCEsat-Max (V)
0.5
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
50
Power Dissipation-Max (W)
5
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
80
Power Dissipation Ambient-Max (W)
0.8
Collector-base Capacitance-Max (pF)
12
Screening Level / Reference Standard
MIL-PRF-19500