INFINEON TECHNOLOGIES AG JANHCA2N7225 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG JANHCA2N7225

生命周期状态
Active
说明
Power Field-Effect Transistor, 27.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XUUC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
DLA Qualification
Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
150
Drain Current-Max (ID) (A)
27.4
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
500
Pulsed Drain Current-Max (IDM) (A)
110
Screening Level / Reference Standard
MIL-19500/592E