JAN2N6798
Microsemi Corporation
- 生命周期状态EOL
- 说明MOSFET N-CH 200V 5.5A TO39
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-205AF
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationQualified
- Terminal PositionBOTTOM
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)25
- Drain Current-Max (ID) (A)5.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Drain-source On Resistance-Max (ohm)0.42
- Screening Level / Reference StandardMIL-19500
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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JAN2N6798