JAN2N5666U3
VPT COMPONENTS
- 生命周期状态Active
- 说明Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-XDSO-N3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- VCEsat-Max (V)1
- Case ConnectionCOLLECTOR
- DLA QualificationQualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)15
- Power Dissipation-Max (W)35
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)250
- Turn-off Time-Max (toff) (ns)1500
- Collector Current-Max (IC) (A)5
- Operating Temperature-Max (Cel)200
- Operating Temperature-Min (Cel)-65
- Collector-emitter Voltage-Max (V)200
- Power Dissipation Ambient-Max (W)1.5
- Collector-base Capacitance-Max (pF)120
- Screening Level / Reference StandardMIL-19500
JAN2N5666U3有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
JAN2N5666U3