JAN2N5115
VPT COMPONENTS
- 生命周期状态Active
- 说明Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Case ConnectionGATE
- DLA QualificationQualified
- Terminal PositionBOTTOM
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)0.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)7
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)200
- Operating Temperature-Min (Cel)-65
- Power Dissipation Ambient-Max (W)0.5
- Drain-source On Resistance-Max (ohm)100
- Screening Level / Reference StandardMIL-19500
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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JAN2N5115