Microsemi Corporation JAN2N4931U4 | 搜芯易Sourcengine

Microsemi Corporation JAN2N4931U4

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Bipolar Transistor, 0.2A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XBCC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
1.2
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
50
Power Dissipation-Max (W)
10
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.2
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
250
Collector-base Capacitance-Max (pF)
15
Screening Level / Reference Standard
MIL-PRF-19500