GPD OPTOELECTRONICS CORP JAN2N489A | 搜芯易Sourcengine

GPD OPTOELECTRONICS CORP JAN2N489A

生命周期状态
Discontinued
说明
Unijunction Transistor, 12uA I(P)
类别
Semiconductors Transistors Unijunction Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
Case Connection
ISOLATED
Terminal Position
BOTTOM
Number of Elements
1
Reference Standard
MIL-19500/75B
Emitter Current-Max
70 mA
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Inter-base Voltage-Max
65 V
Peak Point Current-Max
12 mA
Valley Point Current-Min
8 mA
Operating Temperature-Max
140 Cel
Operating Temperature-Min
-65 Cel
Static Inter-base Res-Max
6.8 kohm
Static Inter-base Res-Min
4.7 kohm
Power Dissipation-Max (Abs)
0.45 W
Transistor Element Material
SILICON
Intrinsic Stand-off Ratio-Max
0.62
Intrinsic Stand-off Ratio-Min
0.51