Microsemi Corporation JAN2N3997 | 搜芯易Sourcengine

Microsemi Corporation JAN2N3997

生命周期状态
Transferred
说明
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MUPM-X4
Configuration
SINGLE
JEDEC-95 Code
TO-111
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
J-STD-609 Code
e0
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
80
Screening Level / Reference Standard
MIL-19500/374