NEW ENGLAND SEMICONDUCTOR JAN2N3767 | 搜芯易Sourcengine

NEW ENGLAND SEMICONDUCTOR JAN2N3767

生命周期状态
Transferred
说明
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-213AA
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
J-STD-609 Code
e0
VCEsat-Max (V)
12.5
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Power Dissipation-Max (W)
20
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
1
Operating Temperature-Max (Cel)
175
Collector-emitter Voltage-Max (V)
80
Power Dissipation Ambient-Max (W)
20
Transition Frequency-Nom (fT) (MHz)
10
Screening Level / Reference Standard
MIL