Microsemi Corporation JAN2N3740U4 | 搜芯易Sourcengine

Microsemi Corporation JAN2N3740U4

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-XBCC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
VCEsat-Max (V)
0.6
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
10
Power Dissipation-Max (W)
25
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
4
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
60
Power Dissipation Ambient-Max (W)
3
Collector-base Capacitance-Max (pF)
100