SEMICOA JAN2N1893S | 搜芯易Sourcengine

SEMICOA JAN2N1893S

生命周期状态
Active
说明
Trans GP BJT NPN 80V 0.5A 800mW
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-39
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
DLA Qualification
Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Power Dissipation-Max (W)
0.8
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
0.5
Operating Temperature-Max (Cel)
200
Collector-emitter Voltage-Max (V)
80
Transition Frequency-Nom (fT) (MHz)
50
Screening Level / Reference Standard
MIL-19500/182
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED