GPD OPTOELECTRONICS CORP JAN2N1559A | 搜芯易Sourcengine

GPD OPTOELECTRONICS CORP JAN2N1559A

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, TO-3, Metal, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-3
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
30
Power Dissipation-Max (W)
106
Transistor Element Material
GERMANIUM
Collector Current-Max (IC) (A)
15
Operating Temperature-Max (Cel)
110
Collector-emitter Voltage-Max (V)
40
Transition Frequency-Nom (fT) (MHz)
0.005
Screening Level / Reference Standard
MIL-19500/330A