GPD OPTOELECTRONICS CORP JAN2N1043 | 搜芯易Sourcengine

GPD OPTOELECTRONICS CORP JAN2N1043

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Germanium, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBPM-W3
Configuration
SINGLE
Package Shape
ROUND
Package Style
POST/STUD MOUNT Meter
Surface Mount
NO
Terminal Form
WIRE
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
20
Transistor Element Material
GERMANIUM
Collector Current-Max (IC) (A)
3
Operating Temperature-Max (Cel)
100
Collector-emitter Voltage-Max (V)
40
Transition Frequency-Nom (fT) (MHz)
0.25
Screening Level / Reference Standard
MIL-19500/137C