IXYS Corporation IXZ316N60 | 搜芯易Sourcengine

IXYS Corporation IXZ316N60

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Z-MOS RF Power MOSFET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-F6
Configuration
N-Channel
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
18 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
175 Cel
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED