IXYS Corporation IXYF40N450 | 搜芯易Sourcengine

IXYS Corporation IXYF40N450

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
High Voltage XPTTM IGBT
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
3.9
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
290
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
786
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1128
Collector Current-Max (IC) (A)
60
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
4500