IXYS Corporation IXXH110N65C4 | 搜芯易Sourcengine

IXYS Corporation IXXH110N65C4

生命周期状态
Active
RoHS
符合RoHS标准
说明
IGBTs to247 650v 110a xpt
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
J-STD-609 Code
e3
Terminal Finish
Matte Tin (Sn)
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
880
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
234
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
650
Time@Peak Reflow Temperature-Max (s)
10