IXYS Corporation IXTY18P10T | 搜芯易Sourcengine

IXYS Corporation IXTY18P10T

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET P-CH 100V 18A TO252
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Pure Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
83
Drain Current-Max (ID) (A)
18
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
200
Pulsed Drain Current-Max (IDM) (A)
60
Drain-source On Resistance-Max (ohm)
0.12