IXYS Corporation IXTV22N50P | 搜芯易Sourcengine

IXYS Corporation IXTV22N50P

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-CH 500V 22A PLUS220
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN SILVER COPPER
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
22 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
500 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
350 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
750 mJ
Drain-source On Resistance-Max
0.27 ohm
Pulsed Drain Current-Max (IDM)
50 A