IXTT75N10L2
IXYS Corporation
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明MOSFET N-CH 100V 75A TO268
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
- JEDEC-95 CodeTO-268AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMatte Tin (Sn)
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)400
- Drain Current-Max (ID) (A)75
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)100
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)2500
- Pulsed Drain Current-Max (IDM) (A)225
- Drain-source On Resistance-Max (ohm)0.021
- Time@Peak Reflow Temperature-Max (s)10
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IXTT75N10L2