IXYS Corporation IXTQ86N20T | 搜芯易Sourcengine

IXYS Corporation IXTQ86N20T

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET msft n-ch trench gate -gen1
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
86
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
1000
Pulsed Drain Current-Max (IDM) (A)
260
Drain-source On Resistance-Max (ohm)
0.029