IXYS Corporation IXTP4N100 | 搜芯易Sourcengine

IXYS Corporation IXTP4N100

生命周期状态
Transferred
说明
Power Field-Effect Transistor, 4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
125
Drain Current-Max (ID) (A)
4
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
100
DS Breakdown Voltage-Min (V)
1000
Feedback Cap-Max (Crss) (pF)
60
Turn-off Time-Max (toff) (ns)
160
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-65
Pulsed Drain Current-Max (IDM) (A)
16
Drain-source On Resistance-Max (ohm)
4