IXYS Corporation IXTN210P10T | 搜芯易Sourcengine

IXYS Corporation IXTN210P10T

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET P-CH 100V 210A SOT227B
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
830
Drain Current-Max (ID) (A)
210
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
3000
Pulsed Drain Current-Max (IDM) (A)
800
Drain-source On Resistance-Max (ohm)
0.0075
Screening Level / Reference Standard
UL RECOGNIZED