IXTH5N100A
IXYS Corporation
- 生命周期状态Active
- RoHS符合RoHS标准
- 说明MOSFETs standard n-channel power mosfet
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AD
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)5 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min1000 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max180 W
- Drain-source On Resistance-Max2 ohm
- Pulsed Drain Current-Max (IDM)20 A
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IXTH5N100A