IXYS Corporation IXTH11P50 | 搜芯易Sourcengine

IXYS Corporation IXTH11P50

生命周期状态
Active
RoHS
符合RoHS标准
说明
MOSFETs to247 500v 11a p-ch mosfet
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSFM-T3
Configuration
Single
JEDEC-95 Code
TO-247AD
Package Shape
RECTANGULAR
Package Style
TO-247-3
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
200
Drain Current-Max (ID) (A)
11
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
500
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
300
Pulsed Drain Current-Max (IDM) (A)
44
Drain-source On Resistance-Max (ohm)
0.75
Time@Peak Reflow Temperature-Max (s)
10
Width
5.3 mm
Length
16.26 mm