IXTD15N60
SILICON TRANSISTOR CORP
- 生命周期状态Discontinued
- 说明Power Field-Effect Transistor, 14.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeX-XUUC-N
- ConfigurationSINGLE
- Package ShapeUNSPECIFIED
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUPPER
- Number of Elements1
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)14.5 A
- DS Breakdown Voltage-Min600 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.5 ohm
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IXTD15N60