IXYS Corporation IXSN55N120U1 | 搜芯易Sourcengine

IXYS Corporation IXSN55N120U1

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 83A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
83 A
Power Dissipation-Max (Abs)
403 W
Gate-emitter Thr Voltage-Max
8 V
Collector-emitter Voltage-Max
1200 V