IXSM25N100A
IXYS Corporation
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-204AE
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max4 V
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-204AE
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Case ConnectionCOLLECTOR
- Terminal PositionBOTTOM
- Additional FeatureHIGH SPEED
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)650 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)1200 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)50 A
- Power Dissipation-Max (Abs)200 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max7 V
- Collector-emitter Voltage-Max1000 V
- Power Dissipation Ambient-Max200 W
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IXSM25N100A