IXYS Corporation IXGX50N60BD1 | 搜芯易Sourcengine

IXYS Corporation IXGX50N60BD1

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT 600V 75A 300W TO247
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
TIN SILVER COPPER
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Number of Elements
1
Rise Time-Max (tr)
150 ns
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
110 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
375 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
75 A
Power Dissipation-Max (Abs)
300 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5.5 V
Collector-emitter Voltage-Max
600 V