IXYS Corporation IXGP12N120A3 | 搜芯易Sourcengine

IXYS Corporation IXGP12N120A3

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT Modules igbt pt-low frequency
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
3
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
100
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
202
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
1545
Collector Current-Max (IC) (A)
22
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
1200