IXYS Corporation IXGP10N80 | 搜芯易Sourcengine

IXYS Corporation IXGP10N80

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 20A I(C), 800V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
J-STD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
Fall Time-Max (ns)
2000
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
200
Power Dissipation-Max (W)
100
Gate-emitter Voltage-Max (V)
30
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
800