IXYS Corporation IXGN60N60C2 | 搜芯易Sourcengine

IXYS Corporation IXGN60N60C2

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT Transistors c2-series very high speed igbts (single igbt)
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
Single
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.5
Case Connection
ISOLATED
Terminal Finish
NICKEL
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
480
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
43
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
210
Collector Current-Max (IC) (A)
75
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600
Screening Level / Reference Standard
UL RECOGNIZED