IXYS Corporation IXGN60N60 | 搜芯易Sourcengine

IXYS Corporation IXGN60N60

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT Transistors discrete igbt high speed series
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
Single
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Finish
NICKEL
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
FAST
Fall Time-Max (ns)
700
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
250
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
50
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
650
Collector Current-Max (IC) (A)
100
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
600
Width
25.42 mm
Length
38.23 mm