IXYS Corporation IXGM25N100 | 搜芯易Sourcengine

IXYS Corporation IXGM25N100

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-204AE
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
3.5 V
JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-204AE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
COLLECTOR
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
350 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
1670 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
50 A
Power Dissipation-Max (Abs)
200 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5 V
Collector-emitter Voltage-Max
1000 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
200 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED