IXYS Corporation IXGH32N60AU1 | 搜芯易Sourcengine

IXYS Corporation IXGH32N60AU1

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT 600V 60A 200W TO247AD
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
2.9 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AD
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
FAST
Fall Time-Max (tf)
175 ns
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
60 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
400 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
60 A
Power Dissipation-Max (Abs)
200 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5 V
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
200 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED