IXGH31N60
IXYS Corporation
- 生命周期状态EOL
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明IGBT Transistors discrete igbt high speed series
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max1.8 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-247AD
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal PositionSINGLE
- Fall Time-Max (tf)1100 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)40 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)1600 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)60 A
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max600 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max150 W
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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IXGH31N60