IXGB25N60R2
IXYS Corporation
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max2.5 V
- JESD-30 CodeR-PSFM-T12
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN ISOLATED DIODE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Fall Time-Max (tf)150 ns
- Number of Elements2
- Rise Time-Max (tr)200 ns
- Number of Terminals12
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)100 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)300 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)25 A
- Power Dissipation-Max (Abs)42 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max5 V
- Collector-emitter Voltage-Max600 V
- Power Dissipation Ambient-Max70 W
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IXGB25N60R2