IXYS Corporation IXFN48N55 | 搜芯易Sourcengine

IXYS Corporation IXFN48N55

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET N-CH 550V 48A SOT-227B
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
600
Drain Current-Max (ID) (A)
48
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
550
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
3000
Pulsed Drain Current-Max (IDM) (A)
192
Drain-source On Resistance-Max (ohm)
0.11
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED