IXYS Corporation IXFN32N100P | 搜芯易Sourcengine

IXYS Corporation IXFN32N100P

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
N-Channel 1000 V 27 A 320 mOhm Mosfet - SOT-227B
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
NICKEL
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
690
Drain Current-Max (ID) (A)
27
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
1000
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
1500
Pulsed Drain Current-Max (IDM) (A)
75
Drain-source On Resistance-Max (ohm)
0.32
Screening Level / Reference Standard
UL RECOGNIZED