IXYS Corporation IXFB210N20P | 搜芯易Sourcengine

IXYS Corporation IXFB210N20P

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
MOSFET msft n-ch hiperfet-polar
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e1
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN SILVER COPPER
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1500
Drain Current-Max (ID) (A)
210
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
4000
Pulsed Drain Current-Max (IDM) (A)
600
Drain-source On Resistance-Max (ohm)
0.0105