IXYS Corporation IXDN75N120A | 搜芯易Sourcengine

IXYS Corporation IXDN75N120A

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 120A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Finish
NICKEL
DLA Qualification
Not Qualified
Terminal Position
UPPER
Fall Time-Max (ns)
100
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
140
Power Dissipation-Max (W)
630
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
120
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED