IXYS Corporation IXBH5N160G | 搜芯易Sourcengine

IXYS Corporation IXBH5N160G

生命周期状态
Active
RoHS
符合RoHS标准
说明
IGBT Transistors igbt bimosfet-high volt
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AD
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
68
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
340
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
190
Collector Current-Max (IC) (A)
5.7
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
1600
Time@Peak Reflow Temperature-Max (s)
10