Name: IXBH40N140 by IXYS Corporation
Brand: IXYS Corporation
SKU: IXBH40N140-1481082612

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 33A I(C), 1400V V(BR)CES, N-Channel, TO-247AD
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

Application
MOTOR CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247AD
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
VCEsat-Max (V)
6
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS
Fall Time-Max (ns)
700
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
150
Power Dissipation-Max (W)
300
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
260
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
310
Collector Current-Max (IC) (A)
33
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
1400
Power Dissipation Ambient-Max (W)
300
Time@Peak Reflow Temperature-Max (s)
10

IXBH40N140

IXYS Corporation