IXYS Corporation IXA60IF1200NA | 搜芯易Sourcengine

IXYS Corporation IXA60IF1200NA

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans IGBT Chip N-CH 1200V
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
Single
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Finish
NICKEL
DLA Qualification
Not Qualified
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
290
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
110
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
350
Collector Current-Max (IC) (A)
88
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED