IXYS Corporation IXA30PG1200DHGLB-TRR | 搜芯易Sourcengine

IXYS Corporation IXA30PG1200DHGLB-TRR

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PDSO-G9
Configuration
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e2
VCEsat-Max (V)
2.2
Case Connection
ISOLATED
Terminal Finish
Nickel/Tin (Ni/Sn)
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
2
Number of Terminals
9
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
150
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
110
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
350
Collector Current-Max (IC) (A)
43
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED