IXYS Corporation IXA20I1200PZ-TRL | 搜芯易Sourcengine

IXYS Corporation IXA20I1200PZ-TRL

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
DISC IGBT XPT-GENX3 TO-263D2
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PDSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
2.1
Case Connection
COLLECTOR
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
165
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
78
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
580
Collector Current-Max (IC) (A)
38
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.5
Collector-emitter Voltage-Max (V)
1200